| 초록 |
Electrochemical devices including lithium ion batteries, dye-sensitized solar cells, and electrolyte-gated transistors have attracted considerable interest in recent years. In a particular case of electrolyte-gated transistors where various kinds of electrolyte solutions are utilized as a gate insulator, the high double-layer capacitance (1~10μF/cm2) of these materials allow thin film transistors to operate at low voltages. Here, we present the low-voltage operation of metal oxide thin film transistors via ion-gated effect. Sol-gel-based metal oxide film was employed as an active channel and self-assembled molecular layers as passivation layers, respectively. With a given device configuration, we successfully demonstrated the sub-1V operation of such a thin film transistor and investigated the device characteristics depending on various concentrations of potassium chloride solutions as a dielectric medium. |
