| 초록 |
The solution processible inorganic based materials for a gate insulator of organic thin film transistors (OTFTs) were suggested. These materials are designed to the double-coated structure, which are called by charge-accumulation inducing layer (CAIL) and electron-trap blocking layer (ETBL). The high k material in the CAIL enable device working at low gate bias voltage (VG= -5 V). Also, the low surface energy of the CAIL assists the pentacene alignment on it. Although the CAIL can increase the performance of the device, it displays the fatal drawback called hysteresis due to –OH groups in the bulk of it. In this reason, the ETBL was employed at interface between the gate electrode and the CAIL to prohibit the electrons injected from gate electrode. Therefore, the pentacene based-OTFTs including the double-coated gate insulator indicated the good flexibility, the operating at low gate bias voltage, and the superior field-effect mobility, 2.59 cm2/Vs, as organic semiconductor. |
