| 학회 | 한국재료학회 |
| 학술대회 | 2009년 봄 (05/21 ~ 05/22, 무주리조트) |
| 권호 | 15권 1호 |
| 발표분야 | 전자재료 |
| 제목 | Effect of post deposition annealing on the properties of ITO/Au/ITO films prepared on glass substrate by reactive magnetron sputtering |
| 초록 | Transparent Sn-doped In2O3 (ITO) single-layer and ITO/Au/ITO multilayer films were deposited on glass substrate by reactive magnetron sputtering to compare morphology, optical and electrical properties of the films and were then annealed in a vacuum of 1X10-2 Pa at various temperatures from 150 to 450℃ to determine the influence of annealing temperature on the properties of the films. As deposited 100 nm thick ITO films exhibit a sheet resistance of 130Ω/□ and optical transmittance of 77% at 550 nm-wavelength. By inserting a 5 nm-thick Au layer in ITO/metal/ITO films, the sheet resistance decreased to as low as 21Ω/□ and optical transmittance also decreased to as little as 73% at 550 nm-wavelength. Post-deposition annealing of ITO/Au/ITO films lead to considerably lower electrical resistivity, higher optical transparency, and crystallization of the films. A sheet resistance of 8Ω/□ and an optical transmittance of 82% at 550 nm wavelength were obtained from the ITO/Au/ITO films annealed at 450℃. In the X-ray diffraction pattern, as-deposited ITO films did not show any diffraction peak, while as-deposited ITO/Au/ITO films have Au (111) and In2O3 (222) crystal planes. When the annealing temperature reached the 150-450℃ range, both diffraction peak intensities increased significantly. |
| 저자 | 김유성1, 채주현2, 김대일2 |
| 소속 | 1한국전기(연), 2울산대 |
| 키워드 | ITO; XRD; Optical transmittacne; Sheet resistiance |
