| 초록 |
Noticeable advances in the performances of organic field-effect transistors(OFETs) in recent year. However, there are some obstacles for using commercially caused by the bias stress stability. The charge traps related to microstructural origins inside OFET devices are not yet clearly understood, and revealing these origins is an important issue. The poly[[N,N’-bis(2-octyldodecyl)-naphthalene-1,3,4,8-bis(dicarboximide)-2,6-diyl]-alt-5,5’-(2,2’-bithiophene)](P(NDI2OD-T2)) were investigated to study the correlation between the molecular orientation and the bias stress stability of an OFETs. Although each devices performances may be similar, the bias stress stabilities quite a different according to molecular orientation. The P(NDI2OD-T2)FETs with face-on structures bias stress stability was more higher than the edge-on-oriented devices. The reason of different bias stress stability related to vertical charge transport and bipolarons during bias stress. |
