| 초록 |
We demonstrated improved performance of poly hexylthiophene (P3HT)/polystyrene (PS) blend field-effect transistors (FETs) by introducing boron-doped multi-walled carbon nanotubes (B-CNTs). Since B-CNTs have an electrostatic repulsion with neighboring B-CNTs due to the local positive charges of boron atoms, they can be homogeneously dispersed in the polymer blend, interconnecting P3HT crystal domains in PS matrix effectively. Therefore, acting as hole transport bridges, B-CNTs, which have desired work function for hole transport with P3HT, can significantly enhance the field-effect mobility of the FETs. Furthermore, even though the metallic B-CNTs were used in the FET, exceptional on/off ratio with very low off current was achieved. We attribute this to the use of insulating PS matrix that hinders the charge transport in off state. In addition, PS matrix improved air stability, and also processability of B-CNT with better dispersion so, it may make printing process easier |
