| 학회 |
한국고분자학회 |
| 학술대회 |
2015년 봄 (04/08 ~ 04/10, 대전컨벤션센터) |
| 권호 |
40권 1호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Fabrication of P3HT based OFET for UV Sensor by Introducing Azobenzene Molecules into a Gate Dielectric |
| 초록 |
We presented a new concept of OFET device with azobenzene derivative/PMMA blending film as the dielectric layer for the ultra-violet photosensor application. In this study, we synthesized azobenzene derivative containing branched alkyl chains to enhance the solubility in PMMA and to avoid crystallization. To prepare the thin azobenzene/PMMA films, the solutions of the mixture of PMMA and azobenzene were spin-coated onto the ITO glasses. And the capacitor using the blending film showed the reversible capacitance switching properties which is induced by illumination with UV and visible light. We fabricated the blending film based OFET devices by simple method. The ITO glasses were used as gate electrodes, and the blend films were used as dielectric layers. P3HT was used to prepare the channel layers. The devices showed the conventional semiconducting properties and they also showed reversible photo-response upon alternating irradiation with UV and visible light. |
| 저자 |
이강은, 윤상수, 이제욱, 이원오, 엄문광
|
| 소속 |
한국기계(연) |
| 키워드 |
Azobenzene; UV sensor; OFET; dielectric
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| E-Mail |
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