| 학회 | 한국재료학회 |
| 학술대회 | 2019년 가을 (10/30 ~ 11/01, 삼척 쏠비치 호텔&리조트) |
| 권호 | 25권 2호 |
| 발표분야 | F. 광기능/디스플레이 재료 분과 |
| 제목 | Flexible Si-based NAND Flash Memory via roll technology |
| 초록 | Flexible electronics have attracted considerable attention due to their light-weight, thin and non-breaking advantages, overcoming the weaknesses of the conventional rigid electronics. In particular, vigorous research on silicon-based flexible LSI (large-scale integration) processor and memory device were triggered as the demand for high-performance, low power-consumption and stably-operating flexible technology increased. It is essential to develop a packaging technology that is compatible with harsh repetitive bending conditions to make the Si-based flexible device in practical use. Despite the importance of packaging technology, fully-packaged ultrathin Si-based flexible device has not been demonstrated so far. In this study, we demonstrated a methodology for realizing ting a fully-packaged ultrathin Si-based flexible device. By eliminating the bottom-Si of the SOI (silicon-on-insulator) wafer, 1 micron thick Si-based device was fabricated on temporary rigid glass substrate and the fabricated device was flip-chip bonded and transferred to the flexible circuit board with ACF (anisotropic conductive film) using highly-productive roll-technology. As a result, fully-packaged Si-based device was fabricated forming CIF (chip-in-flex) structure which is highly elastic and resilient under various stress conditions, maintaining interconnection even when the device was repetitively bent. As a result, fully-packed Si-based device was fabricated by forming CIF (chip-in-flex) structure with highly elastic and resilient under various stress condition to maintain interconnections even when the device was repetitively bend. Finally, packaging process completed, the ultrathin Si-based flexible NAND flash memory with CIF structure was demonstrated and assessed. The memory device showed good memory operation and reliability as in a rigid device under repeated harsh bending tests, which demonstrates the usefulness of the method. |
| 저자 | 남궁훈, 이건재, 김도현 |
| 소속 | Korea Advanced Institute of Science and Technology (KAIST) |
| 키워드 | flexible electronics; NAND flash memory |
