| 학회 | 한국재료학회 |
| 학술대회 | 2013년 봄 (05/23 ~ 05/24, 여수 엠블호텔(THE MVL)) |
| 권호 | 19권 1호 |
| 발표분야 | A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 | Organic resistive memory and nonvolatile analog memory transistor |
| 초록 | Organic resistive memory devices have been considered as potential candidates for next-generation information storage since they are simple, flexible, and stackable. In addition, they have outstanding electrical properties, such as a nondestructive reading process, a nonvolatile memory effect, a high ON/OFF ratio, and a fast switching speed. It is important to correctly address and store data in all operating memory cells. Herein, we demonstrated nonvolatile 8 × 8 array organic memory devices utilizing a PC-interface memory cell tester.[1] The organic memory devices composed of a Ag/poly(3-hexylthiophene-2,5-diyl)/p+ poly-Si structure exhibited excellent memory performance properties, including stable switching behavior, proper statistical distribution, and long retention time. We succeeded in independently addressing and reading the data in the memory cell array using the PC-interface memory cell tester, opening an avenue toward more realistic organic memory device applications. CNT-based memory devices have achieved nanoscale size, high switching ratio, fast switching speed, low power consumption, and nonvolatile memory owing to the nanoscale diameter and large carrier mobility in CNT. C60 molecule has strong electron affinity, and electrons injected into the C60 molecule can be stored stably. However, it is still a challenge to integrate those devices in a large-scale circuit for practical applications because of the large variations of the device properties induced by the intrinsic variations of the CNT structures, electronic properties, locations, densities, and defects. Here, a nonvolatile analog memory transistor was demonstrated by integrating C60 molecules as charge storage component and CNTs as a channel.[2] The currents through the CNT channel could be tuned quantitatively and reversibly to analog values by controlling the number of electrons trapped in the C60 molecules. After tuning, the current through the CNT channel also could be preserved in a nonvolatile manner, indicating the characteristics of the nonvolatile analog memory. [1] IEEE Electron Device Lett., 34, 51, 2013 [2] Small, 2013 (published online) |
| 저자 | 조병진1, 김동호1, 김창수1, 송명관1, Yong Chen2, 이탁희3 |
| 소속 | 1재료(연), 2UCLA, 3서울대 |
| 키워드 | organic resistive memory; nonvolatile analog memory transistor |
