| 초록 |
Organic resistive memory devices holding at least two stable resistance states have been extensively investigated for the memory potential. The advantages of organic memory include simple device structures, low fabrication costs, and printability. Furthermore, the exceptional electrical performance characteristics such as a nondestructive reading process, nonvolatility, and high ON/OFF ratio meet the requirements for viable memory technologies. In this talk, I will present a summary on general characteristics of the materials, device structures, and switching mechanisms used in organic resistive devices. Strategies for performance enhancement, integration, and advanced architectures in these devices are also presented [1], which may open a way toward practically applicable organic memory devices. References: [1] MRS Bulletin, 37, 144 (2012)-review, Adv. Func. Mater. 21, 2806 (2011)-review. |
