| 초록 |
A novel monomer having a triphenylsulfonium triflate moiety as a photoacid generator (PAG) or radical initiator was prepared and copolymerized with other methacylate monomers for lithography. The facile syntheses of the triphenylsulfonium salt methacrylate (TPSMA) monomer and TPSMA-bound polymethacrylates, such as poly(TPSMA) and poly(MMA-co-TPSMA), allowed for high loading content of TPSMA in the polymer. The TPSMA-polymers were characterized to render high thermal stability, high resolution, and sensitivity. We have investigated E-beam, ArF and KrF lithography in order to demonstrate the effect of the resist polymers. These negative PMMA-based resist polymers were successfully applied for fabrication of nano-scale patterns. |
