| 학회 |
한국고분자학회 |
| 학술대회 |
2011년 봄 (04/07 ~ 04/08, 대전컨벤션센터) |
| 권호 |
36권 1호 |
| 발표분야 |
반도체용 고분자소재 |
| 제목 |
Photoacid Generator Bound PMMA-Based Resist for nanostructure Fabrication |
| 초록 |
The semiconductor industry has focused on the development of nano-scale device fabrication and expects that resist materials will play an important role in semiconductor device development. Most of the resists were prepared by mixing a polymer and photoacid generator (PAG). PAG blended resists are known to have inherent incompatibility that can lead to PAG phase separation, aggregation and acid migration. These problems create a tradeoff among achieving the desired characteristics of high resolution, high sensitivity and low line edge roughness through formulation changes. Our group has reported the novel photoacid generating methacrylate monomer with a triphenylsulfonium triflate moiety as the PAG was prepared and polymerized with other monomers to obtain the PAG bound polymer resist materials. We have applied E-beam, AFM, ArF lithography for demonstrating the effect of the polymer bounded PAG resists. These resists were successfully applied for fabricating nano-scale patterns. |
| 저자 |
이해원, 김민정, 손경화, 해먼트 수렌드라 몬드카
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| 소속 |
한양대 |
| 키워드 |
nano-scale device fabrication; photoacid generator; PAG bound polymer resist; lithography
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| E-Mail |
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