| 학회 |
한국공업화학회 |
| 학술대회 |
2015년 봄 (04/29 ~ 05/01, BEXCO (부산)) |
| 권호 |
19권 1호 |
| 발표분야 |
나노_포스터 |
| 제목 |
High-Performance Organic Nano-Floating Gate Memory Devices Based on Cobalt Ferrite Nanoparticles |
| 초록 |
Nano-floating gate memory (NFGM) devices, which are a kind of transistor-type flash memory devices using nanostructured materials as charge trap sites, have attracted great attention due to their excellent performance, capability of multi-level programming, and suitability as platforms for integrated circuits. Herein, novel organic NFGM devices have been fabricated utilizing semiconducting cobalt ferrite (CoFe2O4) nanoparticles (NPs) as charge trap sites with pentacene as a p-type semiconductor. They exhibit a large memory window, a high read current on/off ratio, and fast switching behaviors with good data retention due to the exceptional charge trap capability of CoFe2O4 NPs and the oleate layer surrounding NPs acting as an effective tunneling dielectric layer. |
| 저자 |
정지형1, 김성환2, 김현중2, 박종남2, 오준학1
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| 소속 |
1포항공과대, 2울산과학기술대 |
| 키워드 |
Nano-floating gate memory; cobalt ferrite; nanoparticle; pentacene; organic memory
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| E-Mail |
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