| 학회 | 한국재료학회 |
| 학술대회 | 2021년 가을 (11/24 ~ 11/26, 경주 라한호텔) |
| 권호 | 27권 2호 |
| 발표분야 | F. 광기능/디스플레이 재료 분과 |
| 제목 | A study on the characteristics of PR patterning morphology according to refractive index and reflectance. |
| 초록 | As nano LEDs are being researched as next-generation LEDs, research is being conducted to grow GaN nanorod as bottom-up LEDs. This study was studied to find the optimal process conditions for patterning on a substrate through a photolithography process. GaN nanorod was grown using a substrate coated with PR and hole-patterned with a SiO2 mask. Experiments were conducted using different c-plane sapphire, AlN/sapphire, and GaN/AlN/sapphire substrates for the correlation of each process variable and optimal process conditions through different refractive indices and reflectance. The size of the substrate was 10×10 mm, and spin coating was performed using positive PR (AZ GXR 601). i-line mask aligner(MDA-400S) was used to remove PR, and PR was removed by hard contact with the substrate and mask. The process variables were tested by varying the amount of UV dose and develop time, and the distance between the substrate and the mask. It was analyzed using Atomic force microscope (AFM) to confirm the correlation between refractive index and reflectance according to the surface shape, and Scanning electron microscope (SEM) was used to confirm the shape of the coated PR. |
| 저자 | 강성호, 정우섭, 안민주, 심규연, 김효종, 김화영, 변동진 |
| 소속 | 고려대 |
| 키워드 | photolithogrghy; refractive indices; reflectance |
