| 초록 |
Organic field-effect transistors(OFETs) have attracted attention in recent decades because of their potential applications for flexible electronics. However, although the charge carrier mobilities in OFETs are superior to those of hydrogenated amorphous silicon(a-Si:H)FETs,the OFET device stability remains a critical barrier to their commercial use. Here,we investigated the charge trapping and bias stress stability in Poly(3-hexylthiophene-2,5-diyl)(P3HT) and P3HT random copolymer with 33% ratio of non-alkyl thiophene moieties(RP33) which have low crystallinity,but, high charge carrier mobility by increasing interconnectivity between chains. Although,the charge carrier mobility of RP33 was superior to that of P3HT,the bias stress stability was inferior to that of P3HT due to high degree of amorphous regions. Further experimental evidences by using spectroscopy measurements suggest that although RP33 has low density of deep trap,it has high density of shallow trap during prolonged bias. |
