| 학회 |
한국고분자학회 |
| 학술대회 |
2018년 가을 (10/10 ~ 10/12, 경주컨벤션센터) |
| 권호 |
43권 2호 |
| 발표분야 |
분자전자 부문위원회 II |
| 제목 |
Interfacial Engineering of Highly Efficient Organic Solar Cells via Incorporation of InP based Quantum Dots |
| 초록 |
In this study, we incorporated novel InP based quantum dots (QDs) of various concentration, x (x = 0.5, 1.0, 2.0 and 5.0 mg/mL) into OSCs and evaluated the device performance of OSCs with respect to QDs concentration. Specifically, the OSCs constituted of PTB7:PC71BM blend, ZnO nanoridge and PEDOT:PSS as an active light-harvesting layer, electron and hole transporting layer, respectively. The incorporation of QDs has generally resulted in remarkable improvement in the photovoltaic performance of OSCs. In particular, 1.0 mg/mL QDs incorporated OSCs exhibit the highest short-circuit current density and fill factor, leading to an optimum power conversion efficiency of 9.2%. The observed photovoltaic enhancement can be ascribed to the presence of QDs which passivated the surface defects of ZnO and reduced the energy band offset between ZnO and the active polymer layer. |
| 저자 |
Hock Beng Lee1, 이미소2, He Siwei2, 강재욱2
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| 소속 |
1Chonbuk National Univ., 2전북대 |
| 키워드 |
photovoltaics; quantum dots; interfacial; charge transport; defect-passivation
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| E-Mail |
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