| 학회 |
한국재료학회 |
| 학술대회 |
2020년 가을 (11/18 ~ 11/20, 휘닉스 제주 섭지코지) |
| 권호 |
26권 1호 |
| 발표분야 |
G. 나노/박막 재료 분과 |
| 제목 |
Capacitance-voltage characteristics of WSe2 metal-oxide-semiconductor capacitors |
| 초록 |
Transition metal dichalcogenides such as WSe2 are very promising for various electronic, optoelectronic, and electrochemical applications. While most studies on WSe2 devices focused on improving the performance of WSe2 transistors and photodetectors, not much interest has been given to WSe2 metal-oxide-semiconductor (MOS) capacitors. In this presentation, we report the electrical properties of interface between atomic-layer-deposited Al2O3 and mechanically-exfoliated WSe2 using the capacitance-voltage measurement of Al2O3-WSe2 metal-oxide-semiconductor capacitors. Reasonable hole concentration in WSe2 (~1016 cm-3) and interface trap density between Al2O3 and WSe2 (~1011 eV-1cm-2) were estimated from the capacitance-voltage characteristics. The relatively low frequency dispersion of accumulation capacitance suggested lower border trap density in Al2O3-WSe2 interface than that in Al2O3-MoS2 or Al2O3-MoSe2 interface. These results suggest the feasibility of fabricating high-quality Al2O3-WSe2 devices, with potentially important implications in the device integration of WSe2 and other two-dimensional transition metal dichalcogenides. |
| 저자 |
Minji Kang1, Hae In Yang2, Mingu Ji1, Woong Choi2
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| 소속 |
1School of Materials Science & Engineering, 2Kookmin Univ. |
| 키워드 |
capacitance-voltage characteristics; WSe<SUB>2</SUB>; transition metal dichalcogenides; metal-oxide-semiconductor capacitors
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| E-Mail |
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