| 학회 |
한국화학공학회 |
| 학술대회 |
2015년 봄 (04/22 ~ 04/24, 제주 ICC) |
| 권호 |
21권 1호, p.944 |
| 발표분야 |
재료 |
| 제목 |
Role of Starting Chemical for Growth of MoS2 Monolayer and Multilayers |
| 초록 |
The rise of two-dimensional (2D) material is one of the results of the successful efforts of researchers. One of the most exciting materials is MoS2. Synthesis has been always a major issue as electronic devices need reproducibility. Chemical vapor deposition (CVD) is one of the successful methods for 2D materials including graphene. Furthermore, there are various starting materials available for Mo and S source. The different source chemicals has different effects on the layers and morphology of MoS2 films. In this work, we have extensively studied the CVD technique to grow few layers of MoS2 with different starting chemicals and compare their results. We compare the results of two precursors namely MoO3 and MoCl5, show remarkable changes. The MoO3 source gives a triangular shaped MoS2 monolayer while that of MoCl5 can achieve uniform and controlled MoS2 monolayer without triangle. Eventually, we tried to explain the formation of continuous monolayer of MoS2 without any triangle on the basis of chemical reaction formalism mostly like due to one step reaction process and formation of MoS2 from gas phase to the solid phase. |
| 저자 |
Shraddha Ganorkar1, Jungyoon Kim2, M. S. Diware3, Jeongteak Kwon2, Young Hwan Kim2, Seong-Il Kim2
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| 소속 |
1KIST, 2Korea Institute of Science and Technology, 3Korea Research Institute of Standard and Science |
| 키워드 |
MoS2; CVD; Monolayer
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| E-Mail |
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| 원문파일 |
초록 보기 |
