| 초록 |
Monolithic integrated photonic devices on a single chip are critically important for a broad range of applications, including smart lighting, sensing and display. GaN has a direct energy bandgap of 3.4 eV and can be further tuned from 6.2 eV to 0.65 eV through alloying with In and Al, which enables a broad range of active photonic devices. To date, however, the extraordinary potential of GaN-based materials for integrated photonics has been severely limited by the presence of large densities of defects and dislocations in conventional GaN planar heterostructures. In this context, we propose to develop a GaN nanowire based platform for integrated nanophotonics, which can be monolithically integrated on a single substrate and are nearly free of dislocations. We have further demonstrated the epitaxy of InGaN nanostructures with controlled shape, composition, and morphology, which will serve as the building block for the emerging GaN integrated nanophotonics. We have developed full-color InGaN nanowire LEDs on the single chip by using an unique selective area epitaxy. Our studies open a new paradigm in the design and development of the integrated nanophotonics, wherein the performance is no longer limited by the defect, lattice mismatch, and substrate availability. |
