| 초록 |
Silicon carbide (SiC) is a promising material for various applications in opto- and micro-electronic devices. For preparation of SiC, solgel process, thermal decomposition of silane compound and chemical vapor deposition has been developed. However, these methods are relatively expensive. Industrially, the carbothermal reduction of silica to produce SiC is more interesting. In this study, silicon carbide fiber was made from the silica as silicon source and PAN (polyacrylonitrile) as carbon source by electrospinning method and carbothermal reduction at 1600℃ for 1 h. The samples prepared by the new methods were characterized by XRD, SEM, and TGA. Si and C react for SiC while other element like O, N, H get out of the fiber. |
