| 학회 |
한국재료학회 |
| 학술대회 |
2014년 가을 (11/27 ~ 11/28, 대전컨벤션센터) |
| 권호 |
20권 2호 |
| 발표분야 |
A. 전자/반도체 재료(Electronic and Semiconductor Materials) |
| 제목 |
Kinetics of Ni/Ta-interlayer/Ge Reactions Studied by in-situ Transmission Electron Microscopy |
| 초록 |
This study examined the reaction kinetics for the growth of Ni germanide in the Ni/Ge and the Ni/Ta-interlayer/Ge systems using isothermal in situ annealing in TEM. The reaction in the Ni/Ge system was determined to be diffusion controlled with an activation energy of 0.92 ± 0.19 eV. In addition, the growth rate of Ni germanide in the Ni/Ta-interlayer/Ge system was also diffusion limited and depended on the square root of the time with activation energy of 1.13 ± 0.10 eV. For the Ni/Ta-interlayer/Ge system, the reason for the increase in activation energy was due to the combination of the Ta-rich layer and the ternary amorphous layer formed in the initial stage of the annealing process. |
| 저자 |
Jae-Wook Lee, Jee-Hwan Bae, Tae-Hoon Kim, Hyoungsub Kim, Cheol-Woong Yang
|
| 소속 |
Sungkyunkwan Univ. |
| 키워드 |
kinetics; Ni germanide; isothermal annealing; in-situ TEM
|
| E-Mail |
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