| 초록 |
We fabricated a novel transparent flexible graphene channel floating-gate transistor memory (FGTM) device using a graphene oxide (GO) charge trapping layer on a plastic substrate. The GO layer, which bore ammonium groups (NH3+), was prepared at the interface between the crosslinked PVP (cPVP) tunneling dielectric and the Al2O3 blocking dielectric layers. We systematically explained how to control memory characteristics by graphene doping, and found the optimization condition for the best performance of the memory devices. We emphasize that the proposed optimization via graphene doping can be applied to any graphene channel transistor-type memory devices. Additionally, the positively charged GO (GO–NH3+) interacted electrostatically with hydroxyl groups of both UV-treated Al2O3 and PVP layer, which enhanced the interfacial adhesion and thus, the mechanical stability of the device during bending. The resulting graphene–graphene oxide FGTMs exhibited excellent memory characteristics. |
