화학공학소재연구정보센터
학회 한국재료학회
학술대회 2012년 가을 (11/07 ~ 11/09, 라카이샌드파인 리조트)
권호 18권 2호
발표분야 A. 전자/반도체 재료(Electronic and Semiconductor Materials)
제목 High-performance thin-film-transistors based on MoS2 layered semiconductors
초록 Unlike graphene, the existence of bandgaps (1-2 eV) in the layered semiconductor molybdenum disulfide (MoS2), combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single layer MoS2 field-effect transistors (FETs) in low-power switching devices.  However, the complicated process of fabricating single layer MoS2 with an additional high-k dielectric layer may significantly limit its compatibility with commercial fabrication.  Here we show the first comprehensive investigation of process-friendly multilayer MoS2 FETs to demonstrate a compelling case for their applications in thin-film transistors.  Our multilayer MoS2 FETs exhibited high mobilities (> 100 cm2/Vs), near-ideal subthreshold swings (~70 mV/decade), and robust current saturation over a large voltage window.  With simulations based on Shockley’s long-channel transistor model and calculations of scattering mechanisms, these results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors.
저자 최웅
소속 국민대
키워드 MoS2
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