초록 |
Unlike graphene, the existence of bandgaps (1-2 eV) in the layered semiconductor molybdenum disulfide (MoS2), combined with mobility enhancement by dielectric engineering, offers an attractive possibility of using single layer MoS2 field-effect transistors (FETs) in low-power switching devices. However, the complicated process of fabricating single layer MoS2 with an additional high-k dielectric layer may significantly limit its compatibility with commercial fabrication. Here we show the first comprehensive investigation of process-friendly multilayer MoS2 FETs to demonstrate a compelling case for their applications in thin-film transistors. Our multilayer MoS2 FETs exhibited high mobilities (> 100 cm2/Vs), near-ideal subthreshold swings (~70 mV/decade), and robust current saturation over a large voltage window. With simulations based on Shockley’s long-channel transistor model and calculations of scattering mechanisms, these results provide potentially important implications in the fabrication of high-resolution large-area displays and further scientific investigation of various physical properties expected in other layered semiconductors. |