| 초록 |
In this study, all plastic field effect transistors (FET) with top contact structure were fabricated by using ink-jet printing, spin coating, line patterning process. PEDOT/PSS, PMMA and P3HT were used to make electrode, dielectric and active layer, respectively in FET device. FET device showed the field effect mobility of 8.1 × 10-3 cm2/Vs. These FETs were used to make all plastic integrated circuit which was composed of inverter, NAND gate and NOR gate. Clocking signal generated by the ring oscillator in the integrated circuit was measured. Circuit design, device fabrication and operating mechanism will be discussed in detail. |
