| 학회 | 한국고분자학회 |
| 학술대회 | 2002년 봄 (04/12 ~ 04/13, 서울대학교) |
| 권호 | 27권 1호, p.182 |
| 발표분야 | 특별 심포지엄 |
| 제목 | Low-k Nanoporous Thin Films of A Novel Poly(organosilsesquioxane) |
| 초록 | Poly(methylsilsesquioxane) has attracted much attention as a promising ultra low dielectric material for the next generation logic chips and the incorporation of nanopores is an attractive approach to further decrease the dielectric constant of this material. To be used for interconnect fabrication of circuits, the precise control of pore morphology such as pore size and pore distribution in films is indispensible. In this study, we have synthesized a novel poly(organosilsesquioxane) by the copolymerization of methyltrimethoxysilane and norbornenyltriethoxysilane. The labile norbornene group was anticipated to be removed by thermal stimulation, leaving uniform nanopores in films. TGA analysis has suggested that considerable part of norbornene groups in this copolymer were decomposed between 200 ℃ and 300 ℃. Refractive indices and dielectric constants of the copolymer films were measured. In addition, nanopores could be also incorporated into copolymer films by using an extra pore-generating resin used for the fabrication of nanoporous poly(methylsilsesquioxane). The optical and electrical properties of foamed copolymer films were compared with those of nanoporous poly(methylsilsesquioxane) films. |
| 저자 | 민성규, 박재만, 송기태, 이희우, 진문영, 이진규, 윤도영 |
| 소속 | 서강대 |
| 키워드 | |
