| 학회 | 한국공업화학회 |
| 학술대회 | 2015년 봄 (04/29 ~ 05/01, BEXCO (부산)) |
| 권호 | 19권 1호 |
| 발표분야 | 고분자_포스터 |
| 제목 | Synthesis of an Ambipolar Siloe-based Small Molecular Semiconductor and Its Application in Transistor and Nonvolatile Memory device |
| 초록 | Synthesis of an Ambipolar Siloe-based Small Molecular Semiconductor and Its Application in Transistor and Nonvolatile Memory Device We characterized the electrical properties of field-effect transistor and nonvolatile memory based on Si1TDPP-EE-C6. FESTs device exhibited ambipolar transport properties with a hole mobility of 7.3×10-5cm2/Vs and an electron mobility of 1.6×10-5cm2/Vs. Annealing at 110°C leads to increase in the carrier mobility, hole and electron mobilities of 3.7×10-3 and 5.1×10-4cm2/Vs, repectively. The change in crystalline structure and surface morphology were investigated by grazing incidence X-ray diffraction and atomic force microscopy, which indicated that annealing improved the film crystallinity and promoted the formation of a longer-range lamellar structure. Moreover, nonvolatile memory based on Si1TDPP-EE-C6 was demonstrated by the incorporatoin of Au NPs as charge trapping sites at the interface between SiO2 and cross-linked PVP dielectrics. The device exhibited reliable non-volatile memory characteristics, which include memory window of 98 V, on/off-current ratio of 103. |
| 저자 | 호동해1, 강웅기1, 김봉수2, 조정호1 |
| 소속 | 1성균관대, 2한국과학기술원 |
| 키워드 | Nonvolatile Memory device; small molecule; Field effect transistor |
