| 학회 |
한국재료학회 |
| 학술대회 |
2007년 봄 (05/10 ~ 05/11, 무주리조트) |
| 권호 |
13권 1호 |
| 발표분야 |
반도체재료 |
| 제목 |
Characteristics of SiO2 /Si3N4/SiO2 multilayer Grown by Atomic Layer Deposition for Flash memory applications |
| 초록 |
SiO2/Si3N4/SiO2 multilayers were prepared by atomic layer deposition (ALD) technique, and their physical and electrical properties were characterized for being applied as interpoly dielectric of flash memorys. ALD SiO2 films were deposited at 350-400 oC using alternating exposures of Si2Cl6 and O3/O2, and ALD Si3N4 films were deposited at 400-500oC using alternative exposures of SiH2Cl2 and NH3. Various multilayers having same EOT(Equivalent Oxide Thickness) were produced by using SiO2(O) and Si3N4(N) layers. And each samples were prepared by three different methods, ALD, PECVD and LPCVD. The ONO films showed best electrical characteristics among various multilayers. And ALD films showed better leakage current properties than those of the conventional PECVD, LPCVD films. |
| 저자 |
박광철1, 정광수2, 윤원덕2, 박종욱1, 나사균2, 이원준3
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| 소속 |
1한국과학기술원, 2한밭대, 3세종대 |
| 키워드 |
atomic layer deposition (ALD); silicon dioxide (SiO2); dichlorosilane (SiH2Cl2); ozone (O3); silicon nitride (Si3N4); ammonia(NH3)
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| E-Mail |
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