| 학회 |
한국고분자학회 |
| 학술대회 |
2020년 가을 (10/05 ~ 10/08, 부산컨벤션센터(BEXCO)) |
| 권호 |
45권 1호 |
| 발표분야 |
콜로이드 및 분자조립 부문위원회 I |
| 제목 |
Suppression of exciton quenching in all-inorganic quantum dot light-emitting diode through nickel oxide surface treatment |
| 초록 |
Inorganic hole transport materials in quantum dot light-emitting diodes (QD-LEDs) have attracted attention due to inherently high stability in harsh driving conditions and ambient environments. NiO is a suitable candidate for inorganic hole transport materials (HTM) owing to its stability and moderate mobility. However, some hurdles need to be addressed for the high-performance of NiO-based all-inorganic QD-LED. Exciton quenching caused by free carriers and surface traps on the surface of NiO hole transport layers (HTLs) deteriorates the performance of the devices. We suppress exciton quenching by passivating the trap site of NiO using an appropriate ligand. The ligand exchange method was applied to NiO, XPS conducted for analysis of NiO surface, and the suppression of exciton quenching evaluated through PL decay of QD/NiO. |
| 저자 |
이태민, 이도창
|
| 소속 |
KAIST |
| 키워드 |
Quantum dot; Light-emitting diode; All-inorganic; Exciton quenching
|
| E-Mail |
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