| 초록 |
Poly(3-hexylthiophene) P3HT is attracting a great deal of attention due to the convenient processing method such as solution processable fabrication by spin casting in several organic materials. Generally, long effective conjugation length of P3HT which appears as nanowires has been expected to have more enhanced device characteristics. In order to achieve this nanowire structures, thermal treatments have been performed by means of annealing or melting the semiconductor materials. Many researches, however, showed that device characteristics did not improve through this process even though more lengthen nanofibril and nanowire structures were obtained. In this study, we have investigated this phenomenon which is restricted in interface condition between semiconductor and gate dielectric. Using X-ray diffraction (XRD), Atomic Force microscopy (AFM), we made an investigation into interface phenomenon. |
