| 학회 | 한국재료학회 |
| 학술대회 | 2015년 가을 (11/25 ~ 11/27, 부산 해운대그랜드호텔) |
| 권호 | 21권 2호 |
| 발표분야 | 제29회 신소재 심포지엄 - 2차원 소재/소자 응용 |
| 제목 | Doping Technique Applicable for Oxide 2 Dimensional Semiconductors |
| 초록 | lthough there are emerging inorganic 2-dimenstional materials and their devices, oxide materials, which are very abundant, cheap, easy for processing, and well studied for their physical and chemical properties, also are known to have 2D or 2D-like structure (formed at the local interface and surface as the part of ultra-thin film) in some materials. In order to realize the logic function of two dimensional (2D) semiconductors for future IC devices, while a decent bandgap ＞ 1 eV and higher mobility than that of bulk silicon should be fulfilled, lots of functionalities utilizing 2D semiconductors are also on demand; (1) the low temperature synthesis for application to the flexible devices, (2) feasibility of homogeneous and heterogeneous Schottky and p/n junction diodes, and (3) the facile adjustment of optical absorption and emission. The 2D oxide materials uniquely satisfies those requirements for device applications but challenging issues are how to tune the electronic properties using the proper doping technique. In this talk, I will discuss about the recent advances of 2D oxide semiconductors. Along with the brief introduction to previous work for oxide 2D materials, I will go over recent experimental results for (1) H-radical and (2) F-doping technique applicable for 2D semiconductors. Firstly, H-radicals are generated by photo-dissociative reactions of adsorbed water molecules on the oxide surface. H-radicals are effectively diffused and react with the surface and bulk of oxide to form local metal-H-O bonds, which greatly modifies the molecular orbital states of metal-oxides acting as strong n- or p-type doping depending on the host materials. The examples for InGaZnO, ZnO, and CuO will be discussed. The H-doping technique selective to nano-crystals in amorphous InGaZnO is discussed and this result demonstrates the possibility of large extent transport tunability from the insulating to conducting property. Secondly, the atomically F-doped oxide (TiO2) was fabricated using thermal fluorine (F) functionalization. Applying F-doping technique to atomic layer deposition grown ultra-thin TiO2, a strong modification of diode characteristics were observed. Finally, I will show concepts of nano-flake assembly to utilize wet-synthesis 2D oxide properties for diverse applications such as ultra high-k dielectrics and channels. |
| 저자 | 김진서, 이상연, 서형탁 |
| 소속 | 아주대 |
| 키워드 | <P>2D; oxide; doping; Hydrogen; Fluorine</P> |
