| 초록 |
Imprint lithography has recently emerged as a cost-effective alternative to the conventional lithographic techniques, and production of sub-50 nm features was demonstrated. For this purpose, photo-curable materials which have high polymerizability, low viscosity, good thermal stability, mechanical strength and also insulating properties are required. Polyhedral oligomeric silsesquioxanes (POSSs) are well known hybrid organic-inorganic structures that have unique nanosize applications such as in nano-blocks and nano-pores. In this presentation, we present the synthesis of new materials that combine the properties of current low-k interlayer dielectrics as well as those of resist materials. These molecules are based on polyhedral oligomeric silsesquioxane (POSS) and cyclotetrasiloxane (CTS) precursors containing photo-curable 4-membered cyclic oxetane functional groups. Acknowledgement: This work was supported by "SystemIC2010" project of Korea Ministry of Commerce, Industry and Energy. |
