| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 가을 (10/11 ~ 10/12, 창원컨벤션센터) |
| 권호 |
38권 2호 |
| 발표분야 |
기능성 고분자 (포스터발표만 진행) |
| 제목 |
Effect of acid diffusion control on triphenylsulfonium salt bound polymer resist. |
| 초록 |
Photoacid generators (PAGs) are well known component for enhancing the photoresist’s performance. The resolution of patterns and line edge roughness (LER) is directly influenced by the acid diffusion of PAGs. To investigate the effect of the PAGs’ acid diffusion on the patterns’ resolution, PAG bend and PAG bound polymers’ lithographic performance was evaluated. A triphenyl sulfonium salt methacrylate as PAG was synthesized and copolymerized with crosslinkable glycidyl methacrylate and methyl methacrylate by radical reaction for a new PAG bound polymer resist. The polymers were characterized by 1H NMR and the photoresist’s lithographic performance was evaluated with ArF lithography. PAG bound polymer generated patterns with significantly enhanced line width roughness (LWR) and line edge roughness (LER) compared to PAG blend polymer. |
| 저자 |
정진혁, 박상욱, 이해원
|
| 소속 |
한양대 |
| 키워드 |
Polymer bound PAG resist; Photoacid generator; ArF lithography; Negative type photoresist
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| E-Mail |
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