| 학회 | 한국재료학회 |
| 학술대회 | 2011년 가을 (10/27 ~ 10/29, 신라대학교) |
| 권호 | 17권 2호 |
| 발표분야 | E. Structural Materials and Processing Technology(구조재료 및 공정기술) |
| 제목 | Influence of H2/NH3 reactive gas ratio on CVD Co layer for Cu interconnect |
| 초록 | Microprocessor technology now relies on copper for most of its electrical interconnections. Because of the high diffusivity of copper, diffusion barriers are needed to keep the copper from diffusing into the insulators and silicon semiconductors, in which copper would degrade or destroy performance. Currently, to solve this issue, A Ta/TaN generally serves as the copper adhesion/diffusion barrier. But, Another Problem with device is that its dimensions shrink to the 32nm node and beyond, Cu interconnect schemes are facing difficulties in controlling adhesion/diffusion barrier layer. To prevent the expected problem, Co layer is being widely investigated. Co has a low bulk resistivity, low solubility in Cu. And the adhesion between Co and Cu is many orders of magnitude above Cu and dielectric materials making it an attractive candidate for Cu IC applications. Besides, Due to weaker oxidizing power of Co than Ta, Co layer can be used to direct electroplating. So, in this work, low temperature CVD Co thin films which were deposited with various the flow ratio of reactive gas (H2/NH3) were investigated. Co films were formed on SiO2/Si substrate, by using a di -cobalt hexacarbonyl t-butylacetylene(CCTBA). This work experiments their microstructure, electrical properties and adhesion qualitiy according to flow ratio of H2/NH3 reactive gas. The film resistivity was measured by the four-point probe method. X-ray diffraction (XRD) measurements were used to examine the crystal structure of the deposited films. The film composition was measured using X-ray photoelectron spectroscopy (XPS). Adhesion test of Cu/Co layer was carried out to evaluate adhesion quality. Finally, Roughness of the Co films on the SiO2/Si substrate was measured by atomic force microscopy (AFM). |
| 저자 | 박재형, 박종완, 문대용, 윤돈규 |
| 소속 | 한양대 |
| 키워드 | Cu interconnect; CVD; CCTBA; Cobalt |
