| 학회 |
한국고분자학회 |
| 학술대회 |
2021년 가을 (10/20 ~ 10/22, 경주컨벤션센터) |
| 권호 |
46권 2호 |
| 발표분야 |
분자전자 부문위원회 Ⅰ,Ⅱ |
| 제목 |
Enhancement of Synaptic Long Term Plasticity of WiBS Electrolyte Thin Film Transistors by Ultra-Violet Ozone Treatment |
| 초록 |
Neuromorphic devices that mimic parallel neural networks of the human brain have been actively researched since they can process complex information energy-efficiently. Especially, by modulating channel conductance through ion drift, electrolyte synaptic transistors can implement synaptic plasticity with short-term and long-term memory. Here, we fabricate Indium Gallium Zinc Oxide(IGZO) synaptic transistors using the chitosan electrolyte(CE) and the Water-in-Bisalt(WiBS) containing protons and lithium ions, respectively. The memory windows of the CE transistor and the WiBS transistor are 0.88V and 3.35V, respectively. The WiBS transistor operates stably over a wider voltage range than the CE transistor. Moreover, ultra-violet ozone surface treatment improves Long Term Potentiation(LTP) property of the WiBS transistor by more than 10 seconds. Applying the post treatment and using various ions demonstrate the potential of electrolyte synaptic devices to be used in a neuromorphic system. |
| 저자 |
이해연, 나현재, 임창익, 이재학, 김지연, 진민호, 김연상
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| 소속 |
서울대 |
| 키워드 |
Neuromorphic device; Electrolyte gated synaptic transistor; Synaptic plasticity; Surface engineering; Water-in-basalt electrolyte; Oxide semiconductor thin film transistor
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| E-Mail |
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