| 학회 | 한국고분자학회 |
| 학술대회 | 2005년 가을 (10/13 ~ 10/14, 제주 ICC) |
| 권호 | 30권 2호 |
| 발표분야 | 기능성 고분자 |
| 제목 | Synthesis of Novel Polymer Containing Photo-acid Generator and Its Application of Atomic Force Microscope Lithography |
| 초록 | Photoacid generators (PAGs) have been widely used as a key component for a chemically amplified photoresist. The PAG monomer containing an arylsulfonium triflate group was synthesized and its polymerization behavior was investigated by radical copolymerization with methacrylate (MMA). Due to the electron withdrawing group of PAG itself, this copolymer could be a good candidate for high speed AFM lithography. The molecular weight and the content of PAG were controlled for improving thermal stability and sensitivity for atomic force microscope (AFM) lithography. Based on this concept, the fabrication of anodization patterns will be achieved at the low bais voltage and the high speed of AFM lithographic patterning. The physical properties of resists and lithographic factors affecting the high speed AFM lithography will be discussed. References 1. W. B. Lee, E. R. Kim and H. Lee Appl. Phys. Lett. 80, 2592 (2002) 2. Hengpeng Wu, Kenneth E. Gonsalves Adv. Funct. Master. 4, 271 (2001) |
| 저자 | 윤현진, 장유진, 권기진, 오희영, 이해원 |
| 소속 | 한양대 |
| 키워드 | Photo-acid Generator; Atomic Force Microscope; Lithography |
