| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 봄 (04/11 ~ 04/12, 대전컨벤션센터) |
| 권호 |
38권 1호 |
| 발표분야 |
고분자구조 및 물성 |
| 제목 |
High-Performance n-Channel Thin-Film Field Effect Transistors Based on a Nanowire-Forming Polymer |
| 초록 |
Poly{[N,N'-dioctylperylene-3,4:9,10-bis(dicarboximide)-1,7(6)-diyl]-alt-[(2,5-bis(2-ethylhexyl)-1,4-phenylene)bis(ethyn-2,1-diyl]} was synthesized using Sonagashira coupling and found to form nanowire structures in thin film following a solution-phase self-assembly. Field-effect transistors based on these films showed values of electron mobility and current on/off ratio as high as 0.1 ± 0.05 cm2V-1s-1 and 106-107, respectively, in a nitrogen atmosphere. Grazing-angle X-ray scattering and X-ray reflectivity were used to study the structure of the films and the effects of thermal annealing. The scattering data suggest a structure in which the polymer chains are arranged in π-stacked layers, the “edge-on” orientation of which relative to the substrate is increased by thermal annealing. The reflectivity data show that annealing (up to 200 °C) leads to densification of both the dielectric monolayer and the polymer film and to a sharper and smoother interface between these two layers. |
| 저자 |
정정운1, 이문호2, 권원상2, 안병철2, 김경태2, 고용기2, 정성민2, 권경호2, 송성진2, 이진석2, 김종현2, 위동우2, 김창섭2
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| 소속 |
1포항공과 대, 2postech |
| 키워드 |
polymer; nanowire; field effect transitor
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| E-Mail |
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