화학공학소재연구정보센터
학회 한국화학공학회
학술대회 2015년 봄 (04/22 ~ 04/24, 제주 ICC)
권호 21권 1호, p.816
발표분야 재료
제목 Dielectric Properties of TiO2 Thin Films Prepared by Anodic Oxdation of Titanium
초록 We investigated the dielectric properties of anodized TiO2 film for high density capacitor application. Due to the high dielectric permittivity and breakdown strength (BDS), theoretical energy density for the capacitors with TiO2 thin film reaches several hundreds of watt-hour per kilogram. Preparation methods of TiO2 film for capacitor application such as atomic layer deposition, physical vapor deposition, sol-gel casting require complex processes and prohibitive costs, whereas the anodic oxidation of high-purity titanium is economically viable and simple method to obtain high dielectric permittivity and BDS with low leakage. In this study, titanium specimens were treated by chemical cleaning and mechanical polishing then anodized under 1 to 100 V electrical potential. Film thickness and refractive index were measured by spectroscopic ellipsometry, and the film morphology was studied by scanning electron microscopy. Anodized TiO2 films were fabricated into Metal-insulator-metal capacitors for dielectric characterization. Anodizing parameters such as anodizing voltage, current density, electrolyte composition, and surface preparation methods were manipulated for maximizing BDS and minimizing leakage current.
저자 이태근, 최민지, 최화영, 류원선
소속 홍익대
키워드 Titanium Oxide; High-k Dielectric; Anodizing
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