| 초록 |
Organic field-effect transistors (OFETs) have attracted considerable attention in the past two decades because of their potential applications for flexible printed electronics. However, although remarkable advances in the performances of OFETs in recent years, the device stabilitity (bias stress stability) remains a critical obstacle to their commercial use. Prolonged operation under an applied bias causes a drop in the channel current and a detrimental shift in the threshold voltage of OFETs, which prevents the normal operation of an electronic circuit. The bias-stress-driven electrical instabilities are attributed to charge carrier trapping inside the device. In this talk I will discuss the challenges and our progresses in understanding of charge trapping phenomenon in OFETs, especially on the correlation between molecular structure and bias stress stability of high-mobility and low-crystalline conjugated polymers by using spectroscopy analysis and photo-induced trapping experiments. |
