| 학회 |
한국고분자학회 |
| 학술대회 |
2006년 봄 (04/06 ~ 04/07, 일산킨텍스) |
| 권호 |
31권 1호 |
| 발표분야 |
고분자 구조 및 물성 |
| 제목 |
The Curing Effects of Low-k Material Using Reactive TMSCD as a Porogen. |
| 초록 |
We synthesized chemically reactive trimethxoxysilyl-β-cyclodextrin could react with the copolymer of methyl trimethoxysilane with 25 mol% of bis-1,2-triethoxysilyl ethane as a matrix resin. And it was investigated how the reactive porogen affected the chemical structure of nanoporous films during the porogen decomposition 29Si NMR. During the decomposition of reactive porogens, the chemical structure of nanoporous low-k material was changed from T species to Q species. This structural change might be due to the rearrangement of oxygen on cyclodextrin (CD) during the curing. For matrix, only one peak was mainly observed at -65 ppm corresponding to T3 species while the spectra for the nanoporous low-k material containing 60% TMSCD consisted of one major peak at -65 ppm and the small shoulder at -110 ppm after it was heated at 430 oC for 1 hr under N2. The latter corresponded to Q4 species. And they strongly influenced mechanical properties of nanoporous films. |
| 저자 |
이희우1, 안건우1, 민성규2, 문봉진1, 윤도영3
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| 소속 |
1서강대, 2하이닉스 반도체, 3서울대 |
| 키워드 |
nanoporous; low-k; dielectric; curing
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| E-Mail |
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