| 학회 |
한국고분자학회 |
| 학술대회 |
2007년 가을 (10/11 ~ 10/12, 일산킨텍스) |
| 권호 |
32권 2호 |
| 발표분야 |
분자전자 소재 및 소자 기술(분자전자 부문위원회) |
| 제목 |
Topology Control of Block Copolymer Gate Insulator by Selective Etching of cylindrical Microdomains in Pentacene Organic Thin Film Transistors |
| 초록 |
We investigate the effect of surface topology of a block copolymer/neutral surface/SiO2 trilayered gate insulator on the properties of pentacene organic thin film transistor (OTFT) by the controlled etching of self assembled block copolymer microdomains. The selective etching of cylindrical PMMA microdomains with 25 and 45 nm of diameter and periodicity, respectively hexagonally packed and aligned perpendicular the neutral surface in a poly(styrene-b-methyl methacrylate) (PS-b-PMMA) block copolymer enables us systematically to control the RMS roughness of the film from 0.25nm to 17nm. Both mobility and on-off ratio were reduced in more than 3 orders with the film roughness in OTFTs having 60 nm thick pentacene active layer. The poor device performance observed with the etched block copolymer dielectric is attributed to a pentacene consisting of relatively small grains less than 100 nm in size arising from the nucleation of pentacene preferentially at the edge of each etched hole. |
| 저자 |
조필성1, 박철민1, 김은혜1, 류두열1, 강호철2, 성진우1
|
| 소속 |
1연세대, 2LG Philips LCD R&D center |
| 키워드 |
OTFT; pentacene; gate insulator; topology; block copolymer
|
| E-Mail |
|
