| 학회 |
한국재료학회 |
| 학술대회 |
2019년 봄 (05/15 ~ 05/17, 평창 알펜시아 리조트) |
| 권호 |
25권 1호 |
| 발표분야 |
A. 전자/반도체 재료 분과 |
| 제목 |
Top electrode material dependent resistive switching behavior in Ta2O5 thin film based device |
| 초록 |
Using different top electrode (TE) materials resulted in distinctive resistive switching (RS) behavior in Ta2O5 based 250 nm-sized hole-type devices. In case of TiN, the device showed stable bipolar-RS, while Pt case exhibited unipolar-RS, respectively. In addition, the endurance characteristics were significantly different although the metal-like conducting filament governs the overall RS identically in both cases. To reveal the reason of this obviously different phenomenon, various microscopic analyses were performed, and it was demonstrated that the interface between TE and Ta2O5 layer is responsible for the distinctive resistive switching behavior and endurance characteristic of each devices. The TiN produced the oxygen reservoir layer with the Ta2O5 layer owing to its reactive chemical characteristic while the Pt showed clear interface with Ta2O5 layer. This oxygen reservoir layer prevents the out-diffusion of oxygen during the RS and makes the RS device with TiN reliable compared to Pt case. |
| 저자 |
Han-Cheol Ryu1, Min Kyu Yang2
|
| 소속 |
1Division of IT Convergence Engineering, 2Sahmyook Univ. |
| 키워드 |
resistive switching; ReRAM; Ta2O5
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| E-Mail |
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