| 초록 |
In this study, the poly(2,4,6,8-tetramethyl-2,4,6,8-tetravinylcyclotetrasiloxane-co-cyclohexyl methacrylate) [p(V4D4-co-CHMA)] copolymer was developed for use as a gate dielectric in MoS2 field-effect transistors. The p(V4D4-co-CHMA) copolymer was synthesized via the initiated chemical vapor deposition (iCVD) of two types of monomers: V4D4 and CHMA. Four vinyl groups of V4D4 monomers and cyclohexyl groups of CHMA monomers were introduced to enhance the electrical strength of gate dielectrics through the formation of a highly crosslinked network and to reduce the charge trap densities at the MoS2–dielectric interface, respectively. In addition, the environmental and operational stabilities of MoS2 FETs with p(V4D4-co-CHMA) top-gate dielectrics were superior to those of devices with SiO2 back-gate dielectrics. The use of iCVD-grown copolymer gate dielectrics as demonstrated in this study provides a novel approach to realizing next-generation two-dimensional electronics. |
