| 초록 |
We characterized the properties of ZnO nanorod array fabricated on Si wafer using a low temperature solution method. For ZnO nanorod growth, we prepared ZnO buffer layer coated silicon substrates using metalorganic chemical vapor deposition and sputter-oxidation method. Aligned ZnO nanorod was deposited on the substrate by hydrothermal treatment in the zinc salt and ammonia aqueous solution. The growth temperature was 90 °C. Prepared ZnO nanorod array was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and photoluminescence (PL) spectroscopy. Also, we studied annealing effects on the ZnO nanorod properties. |
