| 학회 |
한국고분자학회 |
| 학술대회 |
2016년 봄 (04/06 ~ 04/08, 대전컨벤션센터) |
| 권호 |
41권 1호 |
| 발표분야 |
분자전자 부문위원회 I |
| 제목 |
Heterogeneous Solid Carbon Source-Assisted Synthesis of Graphene at Low Temperature |
| 초록 |
Polyaromatic hydrocarbon sources (PAHs) have been widely used as solid carbon source for the synthesis of large-area graphene at low temperature. The inevitable formation of structured defect has significantly limited the quality of the synthesized graphene. In this presentation, we report a low-temperature CVD method to effectively tailor the defect formation of graphene during the low temperature growth process using heterogeneous solid carbon sources to fabricate large-area graphene on a Cu. Use of this mixture significantly decreased the defect density of graphene synthesized by the incorporation of thermal decomposed fragments into defect sites. The mobilities of graphene synthesized at low temperature using heterogeneous solid sources are enhanced by a factor of 5 with respect to that of graphene synthesized without aliphatic carbon sources. We proposed two mechanisms by which vacancies can be generated during graphene growth using PAH-carbon sources on Cu. |
| 저자 |
이은호, 이효찬, 조길원
|
| 소속 |
포항공과대 |
| 키워드 |
Graphene; Low temperature; CVD; Copper
|
| E-Mail |
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