| 학회 | 한국재료학회 |
| 학술대회 | 2003년 가을 (11/21 ~ 11/22, 연세대학교) |
| 권호 | 9권 2호 |
| 발표분야 | 세라믹스 |
| 제목 | 화학증착방법으로 성장시킨 탄화규소 나노와이어의 전기적 특성 |
| 초록 | SiC is promising materials because of its typical properties. So, SiC nanowires and rods were fabricated using various methods. Among theses methods, CVD was a effective method to growth SiC nanowire on the Si for using optical and electrical devices. SiC nanowires were synthesized by CVD using single precursors on Si substrate. To growth SiC nanowire, various metal used to catalyst. Catalyst affects microstructures and growth conditions. Electric and optical properties were varied with kind of catalyst. Difference of these characteristics was due to the reactivity of catalyst and stability of growth process Acknowledgment This research was performed with the financial support of the Center for Nanostructured Materials Technology under the 21st Century Frontier R&D Program of the Ministry of Science and Technology, Korea |
| 저자 | 노대호1, 김재수2, 변동진1, 진정근1, 김나리1, 양재웅3 |
| 소속 | 1고려대, 2한국과학기술(연), 3대진대 |
| 키워드 | SIc; nanowire; electrical characteristics |
