| 학회 | 한국재료학회 |
| 학술대회 | 2004년 봄 (05/14 ~ 05/14, 강릉대학교) |
| 권호 | 10권 1호 |
| 발표분야 | 반도체 II (화합물) |
| 제목 | GaN 성장을 위한 이온 주입된 사파이어 기판의 열처리 효과 |
| 초록 | GaN-based materials have many attractive chemical and physical properties by using in high temperature and high power electronic as well as blue UV photonic devices. To grow high quality GaN epilayers, sapphire substrate have been typically adopted in spite of the large differences of lattice constant and thermal expansion coefficient between GaN epilayers and sapphire substrate. The various ions, H+, He+, O+, N+, Ar+, As+, Cl+ and Xe+, were implanted into sapphire(0001) substrate and each of case thermal annealing was carried out at 700℃, 800℃, 900℃ and 1000℃ for 1 hour argon gas atmosphere. After ion implanted sapphire(0001) substrate was annealed at different temperatures in vacuum, we have grown GaN epilayers on implanted sapphire substrate by metal organic chemical vapor deposition(MOCVD). The H+, He+, O+, N+, Ar+, As+, Cl+ and Xe+ with different ion energies and doses were implanted into sapphire(0001) substrate. In order to minimize channeling of the dopants at room temperature, substrates were tilted 7° with respect to the incident beam. For comparison, we grew GaN epilayers on implanted and non-implanted sapphire(0001) substrates together under the same growth conditions. A low-temperature GaN buffer layer with a thickness of 30 nm was grown at 550 ℃. Then, 3-㎛-thick GaN epilayers were deposited on the buffer layer at 1100 ℃ for 60 min. Prior to growth of GaN epilayers, the RMS roughnesses of sapphire(0001) substrate with implanted H+, He+, O+, N+, Ar+, As+, Cl+ and Xe+ were 1.74Å, 2.62Å, 2.37Å, 2.00Å, 1.90Å, 2.88Å, 1.76Å and 2.58Å, respectively. And the RMS roughnesses of GaN epilayers on sapphire(0001) substrate with implanted H+, He+, Ar+, As+, and Xe+ were 3.14Å, 5.90Å, 6.21Å, 18.4Å and 12.5Å, respectively. Also, In order to analyze the residual stress exerted on GaN epilayers on the ion implanted sapphire(0001) substrate, Raman spectroscopy was used. The evaluation of stress in GaN epilayers was performed primarily by using the E2 mode. The Raman shifts of GaN epilayers on sapphire(0001) substrate with implanted H+, He+, Ar+, As+, and Xe+ were 570.7961 cm-1, 570.2963 cm-1, 571.0961 cm-1, 569.4965 cm-1 and 571.8959 cm-1, respectively. |
| 저자 | 강호재1, 진정근1, 이재석1, 박현규1, 연대흠1, 노대호1, 변동진1, 고의관2, 이재상3, 이재형3 |
| 소속 | 1고려대, 2한국기초과학(연), 3한국원자력(연) |
| 키워드 | GaN; ion-implantation; MOCVD; annealing |
