| 학회 | 한국재료학회 |
| 학술대회 | 2004년 봄 (05/14 ~ 05/14, 강릉대학교) |
| 권호 | 10권 1호 |
| 발표분야 | 반도체 II (화합물) |
| 제목 | GaN 성장을 위한 다양한 이온 주입된 사파이어 기판의 효과 |
| 초록 | The structural, electrical and optical properties of GaN epilayers grown on various ion-implanted on sapphire(0001) substrates by metal organic chemical vapor deposition (MOCVD) were investigated. Sapphire is typical substrate for GaN epilayers. However, there are many problems such as lattice mismatch and thermal coefficient difference between sapphire substrate and GaN. The ion-implanted substrate’s surface had decreased internal free energies during the growth of the GaN epilayer, and the misfit strain was relieved through the formation of an AlN phase on the ions implanted sapphire(0001) substrates.[1] The crystal and optical properties of GaN epilayer grown in ions implanted sapphire(0001) substrate were improved. Also, excessively roughened and modified surface by ions degraded the GaN epilyer. Not only the ionic radius but also the chemical species of implanted sapphire(0001) subsrates could improve the properties of GaN epilayers grown by MOCVD.[2] These facts indicate that AlN phase decreased the elastic strain energies by lattice mismatch with the sapphire(0001) substrares, and surface roughness of the sapphire surface was related to the properties of GaN epilayer. It is obvious that the ion-implantation pre-treatment of sapphire(0001) substrates can be an alternative pre-treatment procedure for GaN deposition and has the potential to improve the properties of GaN epilayer on sapphire (0001) substrates. This result implies that higher quality of GaN epilayer was achieved by ion-implantated sapphire(0001) substrate with various ions. References [1] Y.S. Cho, E.K. Koh, Y.J. Park, D. Koh, E.K. Kim, Y. Moon, S.-J. Leem, G. Kim and D. Byun, J. Cryst. Growth 236, 538 (2002). [2] J. Kim, Y.J. Park, D. Byun, J. Jhin, M. Kang, E.K. Koh, Y. Moon and S.-K. Min, Jpn. J. Appl. Phys. 42, 3991 (2003). |
| 저자 | 이재석1, 진정근1, 변동진1, 이재상2, 이재형2, 고의관3, 김충열4, 이현휘4, 문영부5 |
| 소속 | 1고려대, 2한국원자력(연), 3한국기초과학(연), 4LG이노텍, 5LG전자기술원 |
| 키워드 | GaN; ion-implantation; MOCVD |
