| 학회 |
한국고분자학회 |
| 학술대회 |
2013년 봄 (04/11 ~ 04/12, 대전컨벤션센터) |
| 권호 |
38권 1호 |
| 발표분야 |
분자전자 부문위원회 |
| 제목 |
Control of Surface Polarity in Silsesquioxane-Based Dielectrics for Organic Field-Effect Transistors |
| 초록 |
It has been known that electrical performance of multilayered organic devices such as organic field-effect transistors (OFETs) is highly dependent on the interfacial properties. Particularly, the surface polarity of gate dielectrics significantly affects the charge trap densities and charge carrier transport in OFETs. In this study, silsesquioxane (SQ)-based dielectrics with various compositions of controlled polar and non-polar side-groups were carefully synthesized and used as surface polarity-controlled gate dielectrics. On these gate dielectrics, pentacene and PTCDI-C13 films were vacuum-deposited and electrical characteristics of both OFETs were measured. In addition, dielectric surface polarity-dependent crystal structures of these organic semiconducting thin films were systematically characterized by using AFM and GIXD experiments. |
| 저자 |
장미1, 이성수2, 백경열2, 황승상2, 양회창1
|
| 소속 |
1인하대, 2한국과학기술(연) |
| 키워드 |
polymer dielectric; silsesquioxane; organic field-effect transistor
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| E-Mail |
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