| 초록 |
We demonstrate Large-area block copolymer assembly directed with conventional lithography, such as 365 nm i-line lithography, 193 nm ArF lithography or microscale imprinting, as a facile, scalable nanolithography for highly ordered sub-30 nm scale features. Various morphologies of hierarchical block copolymer assembly have been achieved by means of directed self-assembly upon chemically prepatterned surface or disposable topographic confinement of photoresist pattern prepared by those conventional lithography. In addition, imposing micrometer-scale periodic thickness modulation to a lamellar block copolymer film by thermal imprinting raised the spontanous lamellar alignment along thickness gradient. |
