| 초록 |
Cu(In,Ga)3Se5 thin films were deposited by 3-stage co-evaporation process. Crystallographic, optical and electrical properties of the films were reported. The CIGS solar cells were fabricated using Cu(In,Ga)3Se5 thin films as the absorber. Comparing the conventional CIGS solar cell with Cu(In,Ga)Se2 film, the series resistance is too large. In order to increase its efficiency, additional Na was doped into Cu(In,Ga)3Se5 thin films using Na2S compound. Effects of Na incorporation on microstructural and crystalline properties of Cu(In,Ga)3Se5 thin films were investigated by scanning electron microscope, x-ray diffraction. A decrease in resistivity with respect to undoped films were observed with Na incorporation. As a result, a better performance of CIGS solar cells was obtained with Na incorporated Cu(In,Ga)3Se5 thin films . |
