| 학회 |
한국고분자학회 |
| 학술대회 |
2021년 가을 (10/20 ~ 10/22, 경주컨벤션센터) |
| 권호 |
46권 2호 |
| 발표분야 |
미래소재: 반데르발스 층상 소재용 전구체 합성 |
| 제목 |
Thickness-dependent electronic structures of PdSe2 and PtSe2 |
| 초록 |
Narrow bandgap two-dimensional semiconductor has attracted great attention recently due to its infrared optoelectronic application. We investigate thickness-dependent electronic structures of noble transition metal dichalcogenides: PdSe2 and PtSe2 through density-functional theory calculations. While the monolayer PdSe2 is a semiconductor with a bandgap of about 1.2 eV, it has been controversial if the bulk PdSe2 is a semi-metal or a narrow bandgap semiconductor. Our investigation shows that the bulk PdSe2 is not a semi-metal but has a bandgap of about 0.5 eV. The monolayer PtSe2 has a bandgap of about 1.2 eV, and the bulk PtSe2 is a well-known semi-metal. The evolution of bandgap of PtSe2 with thickness has been a controversial issue. Some report that PtSe2 thicker than tri-layer is semi-metallic, while some show that even few-tens-nm-thick PtSe2 is a narrow bandgap semiconductor. Our result shows that the bandgap of PtSe2 converges to zero very slowly with increasing the thickness. |
| 저자 |
김용성 |
| 소속 |
한국표준과학(연) |
| 키워드 |
- |
| E-Mail |
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